MJE3055 Power Transistor

MJE3055 Power Transistor the MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features:

  • VCBOCollector-Base Voltage (IE=0) 70 V
  • VEBOEmitter-Base Voltage (IC=0) 5 V
  • IBBase Current 6 A
  • PtotTotal Power Dissipation at Tcase 25 oC 75 W
  • Rthj-caseThermal Resistance Junction-case Max 1.66 oC/W
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Description

Application Electronic
Usage/Application Electronic
Current 10 A
Storage Temperature -55 to 150 oC
Operating Junction Temperature 150 oC
Meter Voltage 60 V

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